|By PR Newswire||
|March 3, 2014 01:50 PM EST||
DUBLIN, Mar. 03, 2014
/PRNewswire/ --Research and Markets (http://www.researchandmarkets.com/research/wmg49v/gan_semiconductor) has announced the addition of the "Concise Analysis of the International GaN Semiconductor Devices Market - Forecasts to 2019" report to their offering.
Gallium Nitride (GaN) is a wide band gap semiconductor material. Owing to its electrical properties such as saturation velocity and high breakdown voltage, GaN is an ideal choice for high power applications in high voltage switching devices such as RF power amplifiers. Compared to silicon and gallium arsenide, GaN is a matured technology and provides benefits of reducing device size by eliminating cooling requirements which, in turn, reduces the cost of the device.
Growing need for power efficient semiconductor devices coupled with increasing application areas, especially in the field of computers, ICT, consumer electronics, automotive and industrial sector have fuelled the growth of GaN semiconductor devices market. In automotive sector, GaN LEDs have already started replacing incandescent lamps. In consumer electronics sector, the rising demand for fixed and wireless devices such as TVs, laptops, gaming devices and smartphones is expected to drive the GaN semiconductor device market. Currently, military is the largest application area for GaN semiconductor device market. The continuous need for enhanced military performance is expected to drive the GaN semiconductor market for military applications in the coming future. However, consumer electronics is expected to remain dominant application segment for GaN semiconductor device during the forecast period.
In case of product types, currently, GaN is increasingly used in opto semiconductors. GaN acts as a dominant material of choice for opto semiconductors as it helps to combat power loss thereby saving energy. However, power semiconductors show fastest growth potential during the forecast period as GaN is increasingly used in military and industrial applications.
In 2012, North America held the largest market share, and accounted for around 32% of the global GaN semiconductor device market. This can be attributed to the high penetration of GaN based semiconductor products in the field of military, aerospace and defense sector. Asia Pacific GaN semiconductor devices market is expected to be to the fastest growing market in the coming years. This is majorly owing to the advancements in automotive and consumer electronics sector.
Key Topics Covered:
2 Executive Summary
3 Gallium Nitride (GaN) Semiconductor Devices Market Analysis
4 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Product 2013 - 2019
5 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Applications 2013 - 2019
6 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Geography 2013 - 2019
7 Company Profiles
- Cree Inc.
- Efficient Power Conversion Corporation
- Freescale Semiconductor Inc.
- Fujitsu Limited
- GaN Systems Inc.
- International Quantum Epitaxy plc
- International Rectifier
- NXP Semiconductors N.V.
- Nichia Corporation
- RF Micro Devices Inc.
- Renesas Electronics Corporation
- Texas Instruments Inc.
- Toshiba Corporation
For more information visit http://www.researchandmarkets.com/research/wmg49v/gan_semiconductor
Media Contact: Laura Wood , +353-1-481-1716, [email protected]
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