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IEEE Power Electronics Society (PELS) Webinar, “GaN Transistors – Crushing Silicon in Wireless Energy Transfer”

Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT).

In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, and a novel high efficiency voltage-mode class-D topology. Performance comparisons will be based on efficiency and sensitivity to load and coil coupling variations. Each of the topologies has been experimentally tested using the same source and device coil set with the same device rectifier. The experimental units operate with loosely coupled coils at 6.78 MHz (ISM band) and deliver between 15 W and 30 W.

The presenters, Alex Lidow, EPC CEO and co-founder, and Michael de Rooij, Executive Director of Applications Engineering, are the featured speakers. Both are widely published, including being co-authors of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of gallium nitride transistors.

Webinar Registration Information:

Title: GaN Transistors – Crushing Silicon in Wireless Energy Transfer
Date: Wednesday, June 4, 2014
Time: 10:30 AM – 11:30 AM (EDT)
Fee: Free of Charge

About IEEE Power Electronics Society (PELS)

The Power Electronics Society is one of the fastest growing technical societies of the Institute of Electrical and Electronics Engineers (IEEE). For over 20 years, PELS has facilitated and guided the development and innovation in power electronics technology. This technology encompasses the effective use of electronic components, the application of circuit theory and design techniques, and the development of analytical tools toward efficient conversion, control and condition of electric power.

Our 7,000 members include preeminent researchers, practitioners, and distinguished award winners. IEEE PELS publishes the IEEE Transactions on Power Electronics, a top referenced journal among all IEEE publications.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

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