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Samsung Starts Mass Producing Industry’s First 3D TSV Technology Based DDR4 Modules for Enterprise Servers
|By Business Wire
|August 26, 2014 10:00 PM EDT
Samsung Electronics, Ltd. announced today that it has started mass
producing the industry’s first 64 gigabyte (GB), double data rate-4
(DDR4), registered dual Inline memory modules (RDIMMs) that use three
dimensional (3D) “through silicon via” (TSV) package technology. The new
high-density, high-performance module will play a key role in supporting
the continued proliferation of enterprise servers and cloud-based
applications, as well as further diversification of data center
Samsung Electronics 64GB 'through silicon via' DDR4 (Photo: Business Wire)
The new RDIMMs include 36 DDR4 DRAM chips, each of which consists of
four 4-gigabit (Gb) DDR4 DRAM dies. The low-power chips are manufactured
using Samsung’s most advanced 20-nanometer (nm) class* process
technology and 3D TSV package technology.
“Samsung is reinforcing its competitive edge in the DRAM market with its
new state-of-the-art solution using its 3D TSV technology, while driving
growth in the global DRAM market,” said Jeeho Baek, vice president,
memory marketing, Samsung Electronics. “By introducing highly
energy-efficient DDR4 modules assembled with 3D TSV, we’re taking a big
step ahead of the mainstream DDR4 market, which should dramatically
expand with the expected introduction of next-generation CPUs in the
second half of this year.”
Samsung’s volume production of 3D TSV modules marks a new milestone in
the history of memory technology, following the company’s initial
production of 3D Vertical NAND (V-NAND) flash memory last year. While 3D
V-NAND technology embraces high-rise vertical structures of cell arrays
inside a monolithic die, 3D TSV is an innovative packaging technology
that vertically interconnects stacked dies. With its introduction of the
new TSV modules, Samsung has further strengthened its technological
leadership in the “3D memory” era.
To build a 3D TSV DRAM package, the DDR4 dies are ground down as thin as
a few dozen micrometers, then pierced to contain hundreds of fine holes.
They are vertically connected through electrodes that are passed through
the holes. As a result, the new 64GB TSV module performs twice as fast
as a 64GB module that uses wire bonding packaging, while consuming
approximately half the power.
In the future, Samsung believes that it will be able to stack more than
four DDR4 dies using its 3D TSV technology, to create even higher
density DRAM modules. This will accelerate expansion of the premium
memory market, in line with an acceleration of the transition from DDR3
to DDR4 throughout the server market.
Samsung has worked on improving 3D TSV technology since it developed
40nm-class* 8GB DRAM RDIMMs in 2010 and 30nm-class* 32GB DRAM RDIMMs in
2011 using 3D TSV. This year, Samsung started operating a new
manufacturing system dedicated to TSV packaging, for mass producing the
new server modules.
According to a research report from Gartner, the global DRAM market is
expected to reach U.S. $38.6 billion and 29.8 billion units (1Gb
equivalent) by year-end. Gartner also predicted that the server market
will account for more than 20 percent of DRAM production this year with
approximately 6.7 billion units (1Gb equivalent).
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. is a global leader in technology, opening
new possibilities for people everywhere. Through relentless innovation
and discovery, we are transforming the worlds of TVs, smartphones,
tablets, PCs, cameras, home appliances, printers, LTE systems, medical
devices, semiconductors and LED solutions. We employ 286,000 people
across 80 countries with annual sales of US$216.7 billion. To discover
more, please visit www.samsung.com.
* Editors Note: 20-nanometer class means a process technology node
somewhere between 20 and 30 nanometers, while 30-nanometer class refers
to a process technology node somewhere between 30 and 40 nanometers and
40-nanometer class refers to a process technology node somewhere between
40 and 50 nanometers.
Photos/Multimedia Gallery Available: http://www.businesswire.com/multimedia/home/20140826006160/en/
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