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Alliance Memory Inc. at IIC-China 2014; Sept. 2-5; Shanghai New International Expo Centre; Booth 4F08
|By Marketwired .
|August 28, 2014 08:00 PM EDT
SAN CARLOS, CA -- (Marketwired) -- 08/28/14 --
Alliance Memory at IIC-China 2014
At IIC-China 2014, Alliance Memory will be highlighting its latest offering of legacy IC solutions, including high-speed CMOS synchronous DRAMs (SDRAM) and mobile low-power double data rate (DDR), DDR2, and DDR3 SDRAMs featuring a wide range of densities, configurations, package options, and temperature ratings. The devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications.
Lead (Pb)- and halogen-free, all Alliance Memory products on display feature programmable read or write burst lengths. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
New Alliance Memory Products on Display at IIC-China 2014
Mobile Low-Power DDRs
Alliance Memory's new mobile low-power DDRs are designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb AS4C16M16MD1, 512-Mb AS4C32M16MD1, and 1-Gb AS4C64M16MD1 are offered in the 8-mm by 9-mm 60-ball FPBGA package, while the 512-Mb AS4C16M32MD1 features the 8-mm by 13-mm 90-ball FPBGA package.
Link to product photo: https://www.flickr.com/photos/alliancememory/14805982217/sizes/l
High-Speed CMOS DDR 3 Synchronous DRAMs (SDRAM)
Alliance Memory is introducing new high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAMs) with high densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball and 96-ball FBGA packages. Offering a wide variety of configurations -- including 128M x 8, 256M x 8, and 512M x 8 and 64M x 16, 128M x 16, and 256M x 16 -- with a synchronous interface, the devices are available in commercial (0 degrees C to +85 degrees C), industrial (-40 degrees C to +95 degrees C), and automotive (-40 degrees C to +105 degrees C) temperature ranges. Operating from a single +1.5-V power supply, the DDR3 SDRAMs feature a very fast clock rate of 1600 MHz.
Link to product photo: https://www.flickr.com/photos/alliancememory/14506439144/sizes/l
High-Speed CMOS Double Data Rate Synchronous DRAMs (DDR SDRAM)
The latest high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) from Alliance Memory offer densities of 64 Mb, 128 Mb, 256 Mb, and 512 Mb and an industrial temperature range of -40 degrees C to +85 degrees C. Internally configured as four banks of 1M, 2M, 4M, or 8M words x 16 bits with a synchronous interface, the devices operate from a single +2.5-V (+/- 0.2 V) power supply, feature a fast clock rate of 200 MHz, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch.
Link to product photo: http://www.flickr.com/photos/alliancememory/12620515895/sizes/l/
High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM)
DDR2 SDRAMs from Alliance Memory include devices with densities of 512 Mb and 1 Gb, internally configured as four banks of 8M words x 16 bits, and eight banks of 8M x 16 bits and 16M x 8 bits. Offered in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages, the DDR2 SDRAMs feature a synchronous interface, operate from a single +1.8-V (+/- 0.1 V) power supply, and feature a fast clock rate of 400 MHz and data rate of 800 Mbps/pin. The devices are available in commercial (0 degrees C to +85 degrees C), industrial (-40 degrees C to +95 degrees C), and automotive (-40 degrees C to +105 degrees C) temperature ranges.
Link to product photo: http://www.flickr.com/photos/alliancememory/12823860834/sizes/l/
High-Speed CMOS Synchronous DRAMs (SDRAM)
Alliance Memory has extended its offering of 64M, 128M, and 256M high-speed CMOS synchronous DRAMs (SDRAM) with x32 devices in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA and 86-pin 400-mil plastic TSOP II packages. The 2M x 32, 4M x 32, and 8M x 32 devices feature fast access time from clock down to 5.4 ns and operate from a single +3.3-V (+/- 0.3 V) power supply. 256M SDRAMs offers a commercial temperature range of 0 degrees C to +70 degrees C and clock rate of 133 MHz, while the 64M and 128M devices feature an industrial temperature range from -40 degrees C to +85 degrees C with a higher clock rate of 166 MHz.
Link to product photo: http://www.flickr.com/photos/alliancememory/12843111123/sizes/l/
Alliance Memory Inc. is a worldwide provider of legacy memory products for the communications, computing, industrial, and consumer markets. The company supports a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, synchronous DRAMs (SDR), and double data rate synchronous DRAMs (DDR SDRAM). Alliance Memory is a privately held company with headquarters in San Carlos, California, and regional offices in France, the United Kingdom, Italy, Sweden, and Asia. More information about Alliance Memory is available online at www.alliancememory.com.
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